Mathew, S.Chennamadhavuni, S.Rao, R.2026-02-042024Micro and Nanostructures, 2024, 191, , pp. -27730131https://doi.org/10.1016/j.micrna.2024.207848https://idr.nitk.ac.in/handle/123456789/21038In this work, Fourier series-based analytical models for threshold voltage (V<inf>th</inf>) and Sub-threshold Swing (SS) are developed for Junctionless Fin Field Effect Transistor (JLFinFET) on Silicon On Insulator (SOI) substrate, taking into account the location of the onset of current conduction in the channel. Rigorous simulations were conducted to analyse the current conduction path when JLFinFET surpasses the threshold voltage. Based on the findings from these simulations, threshold voltage condition used for deriving the threshold voltage model is modified. This modified model gives a better prediction of V<inf>th</inf> for JLFinFET than the already existing model which doesn't include approximations based on the location of onset of current conduction. The analytical model developed for SS is also capable of closely predicting the SS of JLFinFET obtained from the TCAD simulator down to a gate length of 20 nm. © 2024 Elsevier LtdAnalytical modelsFinFETFourier seriesSilicon on insulator technologyChannel potentialChannel potential modelCurrent conductionDIBLFin field-effect transistorsPotential modelingSilicon on insulatorSilicon on insulator junctionless fin field effect transistorSub-threshold swingSubthresholdThreshold voltage