Manoj, H.Prasad Gupta, M.S.Deepak Naik, J.Gorre, P.Kumar, S.2026-02-0620232nd International Conference on Wireless, Antenna and Microwave Symposium, WAMS 2023, 2023, Vol., , p. -https://doi.org/10.1109/WAMS57261.2023.10242814https://idr.nitk.ac.in/handle/123456789/29425This paper presents a performance analysis of the high efficiency broadband Class F Power Amplifier using even-odd mode matching techniques in Gallium Nitride HEMT Technology for Sub-6-GHz 5G Application. The proposed design circuit consists of broadband input matching network which provides a wideband operation by canceling higher harmonics, high efficiency Class F main amplifier, and series shunt network to enhance the bandwidth. The proposed PA with built-in techniques achieves a fractional impedance bandwidth of 110% in frequency range 2 GHz to 5GHz. The GaN HEMT PA is analyzed and simulated using Keysight's Advanced Design System simulator. A maximum drain efficiency of 78.82% is achieved with a power gain ranging from 10~14 dBm. In addition, an output power > 40 dBm is achieved with the proposed design with drain voltage of 28 V. © 2023 IEEE.Class F modeDrain efficiencyEven-odd modePower Amplifier