Manukrishna, V.R.Nikhil, K.S.2026-02-062024ICDCS 2024 - 2024 7th International Conference on Devices, Circuits and Systems, 2024, Vol., , p. 282-286https://doi.org/10.1109/ICDCS59278.2024.10560488https://idr.nitk.ac.in/handle/123456789/29032In this work, the impact of variation of drift doping profile on the breakdown voltage and ON state power figure of merit (PFOM) of Variable Drift Doped Lateral β -Ga2O3Field Effect Transistor (VDDL-Ga2O3FET) has been reported. The variable lateral doping(VLD) technique was developed with an aim of attaining the minimum surface electric field through a drift region that is non-uniformly doped. In this work five devices namely Device A, Device B, Device C, Device D and Device E are simulated using synopsys sentaurus TCAD after applying VLD technique. The doping under source edge,gate region and drain edge are kept constant in all five devices. The region from gate edge to drain edge is divided into 2,3,4,5 and 10 in Device A, Device B, Device C, Device D and Device E respectively and variable doping is applied such a way that the concentration gradient between adjacent regions reduces as the number of regions increases. The TCAD simulation shows that Device C has maximum secondary breakdown voltage of 1353V and Device E gives maximum PFOM of 0.119MW/cm. Further investigation performed on critical electric field and impact ionization are in alignment with the results. © 2024 IEEE.critical electric fielddrift doping profilePFOMTcad simulationβ-Ga2O3 Field Effect Transistor