Mathew S.Nithin N.Rao R.2021-05-052021-05-0520202020 International Conference on Computational Performance Evaluation, ComPE 2020 , Vol. , , p. 359 - 361https://doi.org/10.1109/ComPE49325.2020.9200016https://idr.nitk.ac.in/handle/123456789/14906This work analyses the influence of dielectric constant of spacer on the electrical characteristics as well as on two vital short channel effect parameters i.e DIBL and Subthreshold Swing of Dual Material Gate Junctionless FinFET (DMG-JLFinFET). Various spacer materials each with different dielectric constant, were used for 3D TCAD simulations. It was observed that high κ spacers gave higher value of ON current. Increase in leakage current was also observed for high κ spacers at higher negative gate bias. Subthreshold Swing (SS) as well as Drain Induced Barrier Lowering (DIBL) had reduced extensively with the increase in dielectric constant of spacer. © 2020 IEEE.Conference Paper