Rao, K.Bangera, K.V.Shivakumar, G.K.2026-02-052013Current Applied Physics, 2013, 13, 1, pp. 298-30115671739https://doi.org/10.1016/j.cap.2012.08.001https://idr.nitk.ac.in/handle/123456789/26888The paper reports the fabrication and detailed electrical characterization of thermal evaporated n-Si/p-ZnTe thin film heterojunction diodes. The heterojunction diodes were prepared by depositing ZnTe films on n-Si substrates. The conduction mechanism, barrier height, space charge density and width of the depletion region were determined by I-V and C-V characteristics of the heterojunction diodes. The bandgap and activation energies of n-Si and p-ZnTe were also determined and a theoretical band diagram of n-Si/p-ZnTe heterojunction was drawn based on Anderson's model. © 2012 Elsevier B.V. All rights reserved.AndersonsBand diagramsBarrier heightsC-V characterizationConduction MechanismDepletion regionElectrical characterizationHeterojunction diodesI-V and C-V characteristicsIV characterizationActivation energyCharacterizationHeterojunctionsSemiconductor diodesSiliconThermal evaporationThin filmsZinc compounds