Vallem, V.Bangera, K.V.G.k, S.2026-02-052019Superlattices and Microstructures, 2019, 129, , pp. 220-2257496036https://doi.org/10.1016/j.spmi.2019.03.007https://idr.nitk.ac.in/handle/123456789/24579Mono-phased and stoichiometric InTe thin films were successfully prepared using vacuum evaporation technique. A systematic variation in substrate temperature and annealing temperature along with annealing duration resulted stoichiometric and single phase InTe films. The annealing treatment of as-deposited films resulted in the structural transformation from mixed phase of In <inf>2</inf> Te <inf>3</inf> and InTe to mono-phased InTe. The electrical conductivity of stoichiometric single phase films was found to be 15.612 ? ?1 cm ?1 . The optical band gap of stoichiometric InTe films was found to be 1.42 eV and absorption coefficient of the films was of the order of 10 6 cm ?1 . Electrical properties of mono-phased films accompanied with optical properties such as direct band gap and absorption coefficient makes them suitable for optoelectronic devices. © 2019 Elsevier LtdAnnealingElectric propertiesEnergy gapIndium compoundsOptical propertiesOptoelectronic devicesSemiconductor materialsTellurium compoundsThin filmsVacuum evaporationAbsorption co-efficientAnnealing temperaturesElectrical conductivityOptoelectronic applicationsStructuralStructural transformationSubstrate temperatureVacuum evaporation techniqueOptical films