Sharma, B.S.Bhat, M.S.2026-02-062017Proceedings of 2017 International Conference on Innovations in Electronics, Signal Processing and Communication, IESC 2017, 2017, Vol., , p. 1-4https://doi.org/10.1109/IESPC.2017.8071854https://idr.nitk.ac.in/handle/123456789/31769Structures based on Indium Gallium Arsenide (InGaAs) have attracted a lot of interest in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) technology recently. In this paper, a new nano-scale dual-gate MOSFET using In<inf>0.75</inf> Ga<inf>0.25</inf>As is proposed. Multiple designs were simulated with different doping concentration in the source/drain region and the channel stop region to get an excellent I<inf>on</inf>/I<inf>off</inf>. Since current in Metal-Oxide-Semiconductor (MOS) depends on the doping profile of the channel, a careful re-engineering of the channel would improve the MOSFET characteristics. Channel length, Lg of the proposed device is 20 nm which produces a significant amplification and supports large current due to wide channel interaction. Simulation of In<inf>0.75</inf> Ga<inf>0.25</inf> As MOSFET with L<inf>g</inf> = 20 nm, gate-oxide thickness t<inf>oxGate1</inf> = t<inf>oxGate2</inf> = 2nm and a width Z = 1000nm, exhibits transconductance g<inf>m-max</inf> ≈ 293.626 μS/μm, subthreshold slope SS ≈ 70 mV/decade and drain-induced-barrier-lowering DIBL = 41.66 mV/V. © 2017 IEEE.InGaAs MOSFETMOSFETNano InGaAs DeviceShort Channel MOSFETThin MOS