Raveendra Kiran, M.Ulla, H.Satyanarayan, M.N.Umesh, G.2026-02-052020Superlattices and Microstructures, 2020, 148, , pp. -7496036https://doi.org/10.1016/j.spmi.2020.106718https://idr.nitk.ac.in/handle/123456789/23559In this study, the resistance switching (RS) behaviour of the fabricated devices with the configuration: ITO/ZnO (x annealing temperature)/Al were investigated. It was observed that the area of a hysteresis loop in the Current-Voltage characteristics was reduced with increase in ZnO annealing temperature. Correspondingly, the on/off ratio of the RS also gets reduced. The hysteresis behaviour was highly consistent and repeatable for the films annealed at 150 °C. The films annealed at 450 °C did not show any RS behaviour. Under the high current condition, a reproducible RS behaviour was observed. This was attributed to the synergetic effects of lowering of the barrier height at electrode/ZnO interface and the increase in the grain size with the annealing temperatures. The RS behaviour is ascribed to the conduction mechanism at the ITO/ZnO interface. © 2020 Elsevier LtdCurrent voltage characteristicsHysteresisII-VI semiconductorsOxide mineralsSwitchingThin filmsZinc oxideAnnealing temperaturesBarrier heightsConduction MechanismFabricated deviceHysteresis behaviourResistance switchingSolution-processedSynergetic effectAnnealing