Neelakanta Reddy I.Jayashree N.Manjunath V.Kim D.Shim J.2021-05-052021-05-052020Catalysts Vol. 10 , 9 , p. 1 - 18https://doi.org/10.3390/catal10090983https://idr.nitk.ac.in/handle/123456789/15745Recently, the engineering of optical bandgaps and morphological properties of graphitic carbon nitride (g-C3N4) has attracted significant research attention for photoelectrodes and environmental remediation owing to its low-cost synthesis, availability of raw materials, and thermal physical–chemical stability. However, the photoelectrochemical activity of g-C3N4-based photoelectrodes is considerably poor due to their high electron–hole recombination rate, poor conductivity, low quantum efficiency, and active catalytic sites. Synthesized Ni metal-doped g-C3N4 nanostructures can improve the light absorption property and considerably increase the electron–hole separation and charge transfer kinetics, thereby initiating exceptionally enhanced photoelectrochemical activity under visible-light irradiation. In the present study, Ni dopant material was found to evince a significant effect on the structural, morphological, and optical properties of g-C3N4 nanostructures. The optical bandgap of the synthesized photoelectrodes was varied from 2.53 to 2.18 eV with increasing Ni dopant concentration. The optimized 0.4 mol% Ni-doped g-C3N4 photoelectrode showed a noticeably improved six-fold photocurrent density compared to pure g-C3N4. The significant improvement in photoanode performance is attributable to the synergistic effects of enriched light absorption, enhanced charge transfer kinetics, photoelectrode/aqueous electrolyte interface, and additional active catalytic sites for photoelectrochemical activity. © 2020 by the authors. Licensee MDPI, Basel, Switzerland.Article