Shamim, M.Z.M.Persheyev, S.Zaidi, M.Usman, M.Shiblee, M.Ali, S.J.Rahman, M.R.2026-02-052020Integrated Ferroelectrics, 2020, 204, 1, pp. 47-5710584587https://doi.org/10.1080/10584587.2019.1674988https://idr.nitk.ac.in/handle/123456789/24096Self-aligned silicon micro-nano structured electron field emitter arrays were fabricated using pulsed krypton fluoride (KrF) excimer laser crystallization (ELC) of hydrogenated amorphous thin silicon films (a-Si:H) on metal coated backplane samples. We investigate the effect of laser processing parameters on the growth of micro-nano conical structures on the surface of the thin silicon films. Randomly oriented conical structures as high as 1 µm were fabricated using laser pulse frequency of 100 Hz and sample stage scanning speed of 0.25 mm/sec. Best field emission (FE) results were measured from samples with the highest surface features with FE currents in the order of 10?6 A and low turn-on emission threshold of ?14 V/µm. Light emission from the prototype demonstrators was tested using bespoke driver electronics and planar anodes coated with indium tin-oxide (ITO) and medium voltage FE phosphors, to exemplify their usage for future flat panel display technologies. © 2019, © 2019 Taylor & Francis Group, LLC.Electron sourcesExcimer lasersFabricationField emission displaysFlat panel displaysFluorine compoundsHydrogenationIndium compoundsLight emissionMetal coatingsMetallic filmsPulsed lasersTin oxidesDriver electronicsElectron field emissionElectron field emitterExcimer laser crystallizationLaser processing parametersLaser pulse frequencyMicro-nano fabricationThin silicon filmsAmorphous silicon