Shenoy, U.S.Bhat, D.K.2026-02-052021Materials Advances, 2021, 2, 19, pp. 6267-6271https://doi.org/10.1039/d1ma00696ghttps://idr.nitk.ac.in/handle/123456789/23028Electronic structure engineering of SnTe by doping various elements to improve its figure of merit has been the most promising approach recently sought after. Pb doped in SnTe is well known to decrease the thermal conductivity but fails to beneficially tune its electronic properties. Herein, we co-dope Bi in SnTe doped with Pb, to improve the power factor of the material. Bi in the presence of Pb exhibits unusual features not shown in the case of Bi doped SnTe. The synergistic action leads to an increase in the band gap and valence band convergence. Bi also introduces resonance states just below the conduction band edge and causes conduction band convergence. An enhanced power factor due to modification of the electronic structure combined with reduced thermal conductivity translates into an enhanced figure of merit of up to ?1.58 at 800 K as predicted using Boltzmann transport calculations, making it a potential thermoelectric material worthy of further study. This journal is © The Royal Society of Chemistry.Bismuth alloysGermanium compoundsIV-VI semiconductorsLayered semiconductorsLead alloysMercury amalgamsNarrow band gap semiconductorsSelenium compoundsSemiconductor dopingSilicon compoundsTellurium compoundsThermal conductivity of solidsTin alloysWide band gap semiconductorsBi dopantsBi-dopedCo-dopantsElectronic.structurePower factorsPropertyStructure engineeringSynergistic actionThermalUnusual behaviorsTin compounds