Billava, R.R.Singh, M.2026-02-0620252025 IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation, IATMSI 2025, 2025, Vol., , p. -https://doi.org/10.1109/IATMSI64286.2025.10984769https://idr.nitk.ac.in/handle/123456789/28671This study investigates the potential of hexagonal boron nitride (hBN) as a gate dielectric material for metal-oxide-semiconductor field-effect transistors (MOSFETs). Known for its excellent insulating properties, hBN was evaluated for its impact on device performance. A 2nm hBN layer was integrated over SiO2 in the MOSFET structure, and its output characteristics (I<inf>D</inf>-V<inf>DS</inf>) were measured across varying gate voltages (V<inf>GS</inf>). The device exhibited well-defined saturation regions, indicative of effective channel modulation, with the drain current (I<inf>D</inf>) increasing linearly with V<inf>DS</inf> in the linear region and achieving saturation, consistent with standard MOSFET behavior. The small terminal charge observed, on the order of 10-32 C, suggests a significant reduction in device capacitance due to the highly effective insulating properties of the hBN layer. This reduction in capacitance could lead to lower power consumption and faster switching speeds, making hBN an attractive candidate for next-generation transistor technologies. © 2025 IEEE.equivalent oxide thickness (EOT)Hexagonal Boron Nitride (hBN)transition metal dichalcogenides (TMDs)