Pottem, S.K.Kabade, R.D.Nikith, T.N.Mondal, S.Kumar, S.2026-02-062021Lecture Notes in Electrical Engineering, 2021, Vol.721 LNEE, , p. 591-60118761100https://doi.org/10.1007/978-981-15-9938-5_55https://idr.nitk.ac.in/handle/123456789/30389This paper presents a CMOS low noise amplifier (LNA) for X-band range of communication for 5G wireless networks. The proposed LNA consists of three stages of casade–cascode CS topology. A Chebyshev filter T-network stage is employed for broadband input impedance matching while cascode–cascade stage is followed for a higher gain. The current mirror topology is used to provide bias current and active load to the LNA. The LNA is designed and simulated using 180 nm UMC Taiwan process in cadence platform. The proposed schematic simulation achieved a gain higher than 15 dB for the range of 8 GHz to 12 GHz (X-Band) and a minimum noise figure (NF) of 4.2 dB at 12 GHz. The proposed differential LNA operates under 2 V power supply and layout using metal–insulator–metal layers. The design and layout are verified using DRC and LVS rules. © 2021, Springer Nature Singapore Pte Ltd.5GCascode–cascadeChebyshev filterComplementary metal oxide semiconductor (CMOS)LNAX-band