Rao, K.G.Bangera, K.V.Shivakumar, G.K.2020-03-302020-03-302011AIP Conference Proceedings, 2011, Vol.1349, PART A, pp.601-602https://idr.nitk.ac.in/handle/123456789/7533p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. � 2011 American Institute of Physics.Book chapter