Rao, G.K.Bangera, K.V.Shivakumar, G.K.2026-02-062011AIP Conference Proceedings, 2011, Vol.1349, PART A, p. 601-6020094243Xhttps://doi.org/10.1063/1.3606001https://idr.nitk.ac.in/handle/123456789/33056p-ZnTe/n-Si heterojunction diodes were prepared by vacuum depositing ZnTe films on n-Si substrates. Detailed electrical characterization was performed to determine the conduction mechanisms operating in the diode. Important parameters such as ideality factor and barrier height were also determined. © 2011 American Institute of Physics.Heterojunction-VI SemiconductorThin FilmVacuum DepositionZinc Telluride