Preethi, M.S.Bharath, S.P.Bangera, K.V.2020-03-302020-03-302018AIP Conference Proceedings, 2018, Vol.1943, , pp.-https://idr.nitk.ac.in/handle/123456789/6623Undoped and gallium doped (1 at.%, 2 at.% and 3 at.%) tin oxide thin films were prepared using spray pyrolysis technique by optimising the deposition conditions such as precursor concentration, substrate temperature and spraying rate. X-ray diffraction analysis revealed formation of tetragonally structured polycrystalline films. The SEM micrographs of Ga doped films showed microstructures. The electrical resistivity of the doped films was found to be more than that of the undoped films. The Ga-doped tin oxide thin films were characterised for gas sensors. 1 at.% Ga doped thin films were found to be better acetone gas sensor, showed 68% sensitivity at 350�C temperature. � 2018 Author(s).Book chapter