Thathron, N.Biradar, B.R.Pandey, S.K.Mal, S.S.Das, P.P.2026-02-032024Journal of Alloys and Compounds, 2024, 1003, , pp. -9258388https://doi.org/10.1016/j.jallcom.2024.175496https://idr.nitk.ac.in/handle/123456789/20869The evolution of the electronic industry constantly relies on downscaling of electronic devices and integrating novel materials in active regions to accomplish ever-higher speeds and new features in device structures. Employing materials that display multistate switching for resistive-random-access-memory or simply resistive memory could be a simple and effective way to realize high density data storage. In this context, we report multistate “nonpolar” resistive switching in a nickel embedded polyoxovanadate cluster, (K<inf>2</inf>H<inf>5</inf>[NiV<inf>14</inf>O<inf>40</inf>]) – a molecule that belongs to the larger polyoxometalate family. We observed unique and distinctive nonpolar resistive switching behaviour for the first time in a multi-redox polyoxometalate cluster. The switching characteristics were repeatable for more than 200 cycles. Our two terminal Al/K<inf>2</inf>H<inf>5</inf>[NiV<inf>14</inf>O<inf>40</inf>])/ITO memory cells exhibited considerably high resistance window (105) and also long retention time (2000 s). This work holds promise for a novel strategy in order to achieve multilevel storage by exploiting different varieties of polyoxometalate molecules as active switching element that can possibly connect memory with neuromorphic computing. © 2024 Elsevier B.V.MoleculesNickelOxidesDown-scalingElectronic industriesElectronics devicesHigh density data storageMulti-stateNon-polarNonpolar switchingPolyoxometalatesPolyoxovanadatesResistive switchingRRAM