Rao, G.K.Bangera, K.V.Shivakumar, G.K.2020-03-312020-03-312011Solid-State Electronics, 2011, Vol.56, 1, pp.100-103https://idr.nitk.ac.in/handle/123456789/13118The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. 2010 Elsevier Ltd. All rights reserved.Article