M.a, M.A.Lakshmi Ganapathi, L.G.G N V R, V.Udayashankar, N.K.Mohan, S.2026-02-052018Sensors and Actuators A: Physical, 2018, 272, , pp. 199-2059244247https://doi.org/10.1016/j.sna.2017.12.066https://idr.nitk.ac.in/handle/123456789/25199Titanium nitride (TiN) thin films are deposited on Si/SiO<inf>2</inf> substratesby using Pulsed DC magnetron sputtering and are characterized for their structural, mechanical and electrical properties for their application as localized heating elements in microsystem devices. The influence of substrate temperature on the properties of TiN films has been investigated. The correlation between the structural orientation with mechanical and electrical properties has been established. The films deposited at a substrate temperature of 300 °C have shown better structural, mechanical and electrical properties. This film has been chosen for the fabrication of microheater and its characterization. A maximum temperature of 250 °C is achieved by applying a power of 2.8 W to the microheater. © 2018 Elsevier B.V.Electric conductivityHeating equipmentMagnetron sputteringMicroelectromechanical devicesNitridesSilicon compoundsThin film circuitsTitaniumTitanium compoundsTitanium nitrideMechanical and electrical propertiesMicroheaterMicrosystem devicesPulsed DC magnetronPulsed DC magnetron sputteringStructural orientationsSubstrate temperatureTitanium nitride thin filmsThin films