Raveendra Kiran, M.R.Ulla, H.KrishnamanoharaSatyanarayan, M.N.Umesh, G.2026-02-052015Synthetic Metals, 2015, 210, , pp. 208-2133796779https://doi.org/10.1016/j.synthmet.2015.10.004https://idr.nitk.ac.in/handle/123456789/26177Charge transport in organic materials is one of the intrinsic properties, which governs the device performance. In this paper, we report the fabrication and electrical characterization of two diodes ITO/VOPc/MoO<inf>3</inf>/Al and ITO/VOPc/Al. We investigate the electrical conduction of Vanadyl phthalocyanine (VOPc) in both the devices and also the effect of MoO<inf>3</inf> as a buffer layer. Improvement of current density through the device is estimated using current density - voltage characteristics and capacitance - voltage characteristics. Space charge limited current (SCLC) conduction with an exponential trap distribution is observed from Impedance measurements. The dominant hopping charge transport is discussed based on ac conductivity measurements and by adopting Correlated barrier hopping (CBH) model. © 2015 Elsevier B.V. All rights reserved.Buffer layersCapacitanceCarrier transportCharge transferElectric impedanceMolybdenum oxideNanobeltsNitrogen compoundsVanadium compoundsCapacitance voltage characteristicCharge hoppingCurrent density-voltage characteristicsElectrical characterizationExponential trap distributionMolybdenum trioxidePhthalocyanineSpace-charge-limited currentSpectroscopic analysis