Sadananda Kumar, N.Bangera, K.V.Anandan, C.Shivakumar, G.K.2026-02-052013Journal of Alloys and Compounds, 2013, 578, , pp. 613-6199258388https://doi.org/10.1016/j.jallcom.2013.07.036https://idr.nitk.ac.in/handle/123456789/26862Undoped and Bi doped zinc oxide thin films were deposited on glass substrate at 450 °C using spray pyrolysis technique. The X-ray diffraction studies shows that Bi doped ZnO films are polycrystalline hexagonal structure with a preferred orientation along (101) direction. Crystallites size of the films decreases with increasing doping concentration. Scanning electron microscope image shows change in the surface morphology. The composition of Zn, O and Bi elements in the undoped and Bi doped ZnO films were investigated by X-ray photoelectron spectroscopy. Bi doped ZnO thin films show a transparency nearly 75% in the visible region. The optical band gap of ZnO thin films reduces from 3.25 eV to 3.12 eV with an increase in Bi concentration from 0 to 5at.% respectively. Electrical conductivity of ZnO thin films increased from 0.156 to 6.02S/cm with increasing Bi dopant concentration from 0% to 5% respectively. © 2013 Elsevier B.V. All rights reserved.Crystal structureDoping (additives)Energy gapMetallic filmsOptical filmsOptical propertiesOxide filmsPhotoelectron spectroscopyPhotoelectronsPhotonsPyrolysisScanning electron microscopySemiconductor dopingSemiconductor materialsSpray pyrolysisSubstratesSynthesis (chemical)X ray diffractionX ray photoelectron spectroscopyZincZinc oxideThin filmsDoping concentrationElectrical conductivityGlass substratesHexagonal structuresPreferred orientationsScanning electronsSpray-pyrolysis techniquesX-ray diffraction studies