Gautham, T.N.Reddivari, R.Jena, D.2026-02-042023IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70, 4, pp. 1495-149915497747https://doi.org/10.1109/TCSII.2022.3224662https://idr.nitk.ac.in/handle/123456789/21960The conventional differential boost inverters have limited voltage gain due to the inductor's parasitic resistance, which limits the output voltage ranges as the duty cycle approaches unity and causes a narrow input voltage range. Moreover, it is also vulnerable to shoot-through problems and a dc-offset problem that leads to high voltage stress across capacitors. The proposed two winding magnetically coupled semi Γ-type structures produce high voltage boosting with decreasing turns ratio (1 < K < 2). The modified PWM scheme is implemented to operate the proposed inverter to overcome the dc-offset problem in output capacitors, which further reduces the voltage stress on the system. Furthermore, provides step-up sinusoidal output voltage/current without LC-filter, dead time, and shoot-through operation. The designed prototype is analyzed for Silicon and silicon carbide (SiC) switch using PSIM thermal module. The features of the proposed inverter are comprehensively compared with state-of-the-art topologies. Finally, the simulation and experimental findings verify the proposed topology. © 2004-2012 IEEE.Electric invertersGain measurementSilicon carbideBoost invertersCoupled inductorDC offsetsDifferential boost inverteImpedance-source invertersMagnetically coupled impedance source inverterSemi-Γ-typeShoot-throughSingle phasisVoltage gainTopology