Fernandes, J.M.Raveendra, Kiran, M.Ulla, H.Satyanarayan, M.N.Umesh, G.2020-03-312020-03-312014Superlattices and Microstructures, 2014, Vol.76, , pp.385-393https://idr.nitk.ac.in/handle/123456789/11764The charge accumulation leading to injection at the organic interface in the sequentially doped hole-only device structure is studied using capacitance and impedance based spectroscopic techniques. In this paper, we investigate the role of p-type dopant 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in the charge transport properties of N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1?-biphenyl)-4,4?-diamine (?-NPD) through sequential deposition. We show that the hole injection into ?-NPD increases with the increase of interlayer (F4TCNQ) thickness by correlating the current density-voltage, capacitance-voltage, capacitance-frequency and impedance measurements. 2014 Elsevier Ltd. All rights reserved.Article