Sadananda, Kumar, N.Bangera, K.V.Anandan, C.Shivakumar, G.K.2020-03-312020-03-312013Journal of Alloys and Compounds, 2013, Vol.578, , pp.613-619https://idr.nitk.ac.in/handle/123456789/12692Undoped and Bi doped zinc oxide thin films were deposited on glass substrate at 450 C using spray pyrolysis technique. The X-ray diffraction studies shows that Bi doped ZnO films are polycrystalline hexagonal structure with a preferred orientation along (101) direction. Crystallites size of the films decreases with increasing doping concentration. Scanning electron microscope image shows change in the surface morphology. The composition of Zn, O and Bi elements in the undoped and Bi doped ZnO films were investigated by X-ray photoelectron spectroscopy. Bi doped ZnO thin films show a transparency nearly 75% in the visible region. The optical band gap of ZnO thin films reduces from 3.25 eV to 3.12 eV with an increase in Bi concentration from 0 to 5at.% respectively. Electrical conductivity of ZnO thin films increased from 0.156 to 6.02S/cm with increasing Bi dopant concentration from 0% to 5% respectively. 2013 Elsevier B.V. All rights reserved.Article