M.a, M.A.Lakshmi Ganapathi, K.L.Ambresh, M.Nukala, P.Udayashankar, N.K.Mohan, S.2026-02-042022Vacuum, 2022, 197, , pp. -0042207Xhttps://doi.org/10.1016/j.vacuum.2021.110795https://idr.nitk.ac.in/handle/123456789/22650In this paper, we report the fabrication and characterization of titanium nitride (TiN) thin-film-based microheaters. TiN thin films have been optimized on Si and SiO<inf>2</inf> substrates for their optimum electrical resistivities by controlling the process parameters, including argon:nitrogen (Ar:N<inf>2</inf>) ratio in reactive pulsed DC magnetron sputter (PDCMS) deposition technique. An optical emission spectroscope (OES) was used for monitoring the plasma characteristics at various nitrogen flow rates. The microstructural and surface properties of the TiN films have been investigated and correlated with the electrical properties. It has been observed that the amount of nitrogen flux in the TiN plasma plays an essential role in the microstructural, surface, and electrical properties of the TiN thin films. Micro-heaters have been fabricated with TiN thin films with low electrical resistivity using laser engraving techniques instead of conventional lithographic and micromachining techniques. The TiN microheater has shown excellent performance. A temperature of 406 °C has been achieved by applying an input power of 8 W. This work paves the path for developing scalable and economic TiN microheaters using laser micromachining techniques. © 2021Electric conductivityHeating equipmentMagnetron sputteringMetallic filmsMicromachiningNitrogen plasmaPlasma CVDPulsed lasersSilicaSiliconThin filmsTitanium nitrideFabrication and characterizationsLaser engravingLaser micro-machiningLaser-micromachiningMicro-structuralMicroheaterMicromachining techniquesPulsed DC magnetron sputteringReactive pulsed DC magnetra sputteringTitanium nitride thin filmsNitrogen