Sadananda, Kumar, N.Bangera, K.V.Shivakumar, G.K.2020-03-312020-03-312015Semiconductors, 2015, Vol.49, 7, pp.899-904https://idr.nitk.ac.in/handle/123456789/12686Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450 C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm2 V 1 s 1, and a hole concentration of 6.25 1017 cm 3. 2015, Pleiades Publishing, Ltd.Article