Mathew, S.Rao, R.2026-02-032025Journal of Electronic Materials, 2025, 54, 8, pp. 6858-68693615235https://doi.org/10.1007/s11664-025-12055-7https://idr.nitk.ac.in/handle/123456789/20163In this article, a robust Fourier series based analytical model for channel potential is derived for a Dual Material Gate Junctionless Fin Field Effect Transistor (DMG JLFinFET) on a Silicon-On-Insulator (SOI) substrate. For most of the regions in the cuboidal channel, especially at the location where the onset of current conduction happens, the channel potential model developed in this work matches very well with the potential obtained from TCAD simulations. The analytical model presented in this article is capable of calculating the channel potential of the DMG JLFinFETs for most of the channel region, considering various device parameters such as channel length, fin height, and fin width, with a maximum deviation of 0.07 V. However, for channel regions very close to buried oxide, the channel potential model over-predicts potential obtained through simulation by around 0.1 V. In most of the cases of varying device parameters, the Fourier series-based potential model developed in this work accurately predicts channel potential at the location of the onset of current conduction. Hence, it can be used to model various device parameters such as threshold voltage and sub-threshold swing. © The Minerals, Metals & Materials Society 2025.Analytical modelsFins (heat exchange)Fourier seriesNanosensorsSilicon on insulator technologySimulation platformThreshold voltageChannel potentialChannel potential modelCurrent conductionDevice parametersDual-material gatesFinFETsFourierFourier series-based modelJunctionless FinFETPotential modelingFinFET