Ashwini, N.Nikhil, K.S.2026-02-032025Microelectronics Journal, 2025, 165, , pp. -9598324https://doi.org/10.1016/j.mejo.2025.106813https://idr.nitk.ac.in/handle/123456789/20012In this work, temperature dependent linearity parameters of Galliun Nitride (GaN, a wide gap material) based Junctionless Drain Extended FinFETs (JLDEFinFETs) for a temperature ranging from 100K to 450K are investigated using 3D thermodynamic TCAD simulation. An analysis of the transfer characteristics, off-current, transconductance, and its derivatives are carried out at various temperatures. Additionally, the impact of various linearity parameters, such as VIP<inf>2</inf>, VIP<inf>3</inf>, IIP<inf>3</inf>, IMD<inf>3</inf>, and the 1-dB compression point on temperature is studied in detail. The device under consideration has a metal gate contact which offers opportunities to tune its performance parameters like on-current, off-current and threshold voltage. A comparative analysis of the designed device with various devices is also carried out to validate the device design. © 2025 Elsevier LtdElectronic design automationFinFETTemperature distributionThreshold voltageWide band gap semiconductorsFinFETsJunctionless drain extended FinFETLinearityMaterial-basedOff currentOff-currentTCADTemperature dependenceTemperature dependentWide-gap materialsGallium nitrideIII-V semiconductors