Manju, M.S.Ajith, K.M.Valsakumar, M.C.2026-02-062018AIP Conference Proceedings, 2018, Vol.1953, , p. -0094243Xhttps://doi.org/10.1063/1.5033052https://idr.nitk.ac.in/handle/123456789/31485Uniaxial stress was applied along zigzag and armchair directions in compressive and tensile regime to see if there is any metal-semiconductor transition in SiB. Metallicity increased with increasing stress both in compression and tension in zigzag and armchair directions instead of a metal-semiconductor transition. SiB maintained energetical stability in the whole range of applied stress. © 2018 Author(s).