Semiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.

Shreekanthan, K.N.Kasturi, V.B.Shivakumar, G.K.2026-02-05Growth andIndian Journal of Engineering and Materials Sciences, 2003, 10, 5, pp. 433-4369714588https://idr.nitk.ac.in/handle/123456789/279722003Absorption edgePost-deposition heat treatmentThermal evaporation techniqueActivation energyCharacterizationCompositionCrystallographyGrain boundariesGrowth (materials)Optoelectronic devicesPhotodiodesPolycrystalline materialsSemiconducting telluriumSemiconductor lasersSingle crystalsSpectrophotometryStoichiometryThin filmsTransmission electron microscopyCadmium alloysSemiconducting thin films of cadmium telluride, both p-type and n-type, have been prepared by conventional thermal evaporation technique. The influence of various growth parameters such as the rate of deposition, deposition temperature, post-deposition heat treatment, and source material composition has been investigated. The films deposited at high deposition rates and low substrate temperatures exhibited an excess of tellurium and showed a p-type conductivity, whereas those deposited at high substrate temperature and low deposition rates contained excess cadmium and are n-type in nature. An intrinsic bandgap of 1.49 eV for stoichiometric films obtained by both electrical and optical characterization is reported.