Nandini, P.Naik, D.N.Gorre, P.Gupta, M.P.Kumar, S.Al-Shidaifat, A.Song, H.2026-02-032024Journal of Infrared, Millimeter, and Terahertz Waves, 2024, 45, 46304, pp. 789-80718666892https://doi.org/10.1007/s10762-024-01009-5https://idr.nitk.ac.in/handle/123456789/20886This work reports an ultra-low noise, multi-stage stagger-tuned low-noise amplifier (MS-ST-LNA) over the D-band performance and achieves a best trade-off between noise, bandwidth, and gain parameters. The ultra-low-noise is achieved in three ways: First, the high-gain 3-stage stagger tuned amplifier (STA) realizes a 3X gain compared to the conventional single-stage amplifier, which sets a low floor noise. Second, the stagger-tuned amplifier achieves 1.6 times lower noise than the traditional single-stage amplifier. Finally, the stagger tune realizes a high-order transfer function, which mitigates the high-frequency noise. The full LNA is implemented and fabricated using a commercial nano-manufacturing 9-nm graphene film FET on a silicon wafer using a 0.065-?m commercial process, occupying an area of 0.21 mm2. The proposed design achieves an optimum performance: a maximum measured gain of 20.5 dB and a minimum noise figure (NF) of 4.2 dB over 123.7 to 162.5 GHz. The proposed LNA consumes ultra-low power consumption of 21.3 mW under the power supply of 1.2 V. © The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.Integrated circuit designLow noise amplifiersNoise figureD-bandGraphene FETGraphenesLow noiseamplifierMulti-stagesSingle stage amplifiersTera HertzTerahertzTuned amplifiersUltra low noiseSilicon wafers