Rao, G.K.Bangera, K.V.Shivakumar, G.K.2026-02-052011Solid State Sciences, 2011, 13, 11, pp. 1921-192512932558https://doi.org/10.1016/j.solidstatesciences.2011.08.017https://idr.nitk.ac.in/handle/123456789/27161The paper reports the detailed analysis of photoconductivity and photo-detecting properties of vacuum deposited zinc selenide (ZnSe) thin films. The vacuum deposited ZnSe films were found to have high absorption coefficient and showed peak photo-response at 460 nm. The photocurrent and photo-response time of the films were measured as a function of substrate temperature and annealing conditions. Considerable increase in photocurrent and much faster photo-response was observed in films deposited at high substrate temperatures. Annealing at moderate temperatures also improved the photoconductivity and response time of the films. © 2011 Elsevier Masson SAS. All rights reserved.Absorption coefficientsAnnealing conditionHigh substrate temperatureModerate temperaturePhotoresponsesSubstrate temperatureZinc selenideZnSe filmsZnSe thin filmsPhotoconductivityPhotodetectorsThin filmsVacuumPhotoelectricity