Mahesha, M.G.Bangera, K.V.Shivakumar, G.K.2026-02-052009Materials Science in Semiconductor Processing, 2009, 12, 3, pp. 89-9313698001https://doi.org/10.1016/j.mssp.2009.07.014https://idr.nitk.ac.in/handle/123456789/27632Nano-crystalline CdTe/CdS thin film hetero-junctions have been grown on glass substrate by thermal evaporation technique. The growth conditions to get stoichiometric compound films have been optimized. The grown hetero-junctions have been characterized for their I-V characteristics. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in p-CdTe/n-CdS hetero-junction. The band gap energy of cadmium telluride and cadmium sulfide films have been computed from the study of variation of resistance with temperature. Based on the study, band diagram for p-CdTe/n-CdS hetero-junction has been proposed.Band diagramsBand gap energyCdSCdTeCdTe/CdS thin filmsCurrent conduction mechanismsGlass substratesGrowth conditionsIV characteristicsNanocrystallinesStoichiometric compoundThermal evaporation techniqueCadmiumCadmium alloysCadmium sulfideCadmium tellurideData storage equipmentThermal evaporationCadmium compounds