Somayaji, B.J.Bhat, M.S.2020-03-302020-03-302017Journal of Low Power Electronics, 2017, Vol.13, 4, pp.669-677https://idr.nitk.ac.in/handle/123456789/6846This paper presents the design of RESURF based non-conventionalDrain ExtendedMOS (DEMOS) and its parametric analysis. The work investigates the impact of three primary parameters relating to p-implant, namely implant placement distance, implant doping and implant thickness, on device performance and premature avalanche breakdown. To avoid undesirable implant-drain punch-through, a boundary of limits is proposed near drain. Further, the implant parameters are optimized to maximize the ratio of Breakdown Voltage (BVt) to ON-resistance (RON). A breakdown voltage of 21 V at a low RON of 2.5 k? was achieved for a device gate length of 250 nm and gate oxide thickness of 5 nm. Using the optimized device design, the RF/Analog performance parameters are extracted and evaluated to enhance the suitability of the device for high voltage I/O applications in Sub-micron RF-SoC. Copyright � 2017 American Scientific Publishers All rights reserved Printed in the United States of America.Book chapter