Palimar, S.Banger, K.V.Shivakumar, G.K.2026-02-052012Journal of Applied Sciences, 2012, 12, 16, pp. 1775-177718125654https://doi.org/10.3923/jas.2012.1775.1777https://idr.nitk.ac.in/handle/123456789/26956The present study reports the observations made on investigations carried out to study structural, optical and electrical properties of aluminium oxide doped ZnO thin films obtained by thermal evaporation technique. Films obtained are found to be amorphous in nature with smooth and continuous surface. Room temperature conductivity of the film is found to be 5x10 3 U -1 cm -1 with visible region transmittance of above 95%. The optical energy gap of the film is found to be 3.25 eV. From the calculations of activation energy, it is observed that the doped ZnO film has two donor levels, one at 142 meV and other at 43 meV. A detailed analysis of the result is reported. © 2012 Asian Network for Scientific Information.Aluminium oxideContinuous surfaceDonor levelsDoped zinc oxide thin filmsDoped ZnODoped ZnO thin filmsElectrical conductivityOptical and electrical propertiesOptical energy gapOptical propemRoom-temperature conductivityThermal evaporation techniqueVisible regionZnO thin filmActivation energyAmorphous filmsElectric conductivityMetallic filmsOptical filmsOxidesZinc oxideThermal evaporation