Manju, M.S.Ajith, K.M.Valsakumar, M.C.2020-03-302020-03-302018AIP Conference Proceedings, 2018, Vol.1953, , pp.-https://idr.nitk.ac.in/handle/123456789/6869Uniaxial stress was applied along zigzag and armchair directions in compressive and tensile regime to see if there is any metal-semiconductor transition in SiB. Metallicity increased with increasing stress both in compression and tension in zigzag and armchair directions instead of a metal-semiconductor transition. SiB maintained energetical stability in the whole range of applied stress. � 2018 Author(s).Book chapter