Vallem, V.Bangera, K.V.Shivakumar, G.K.2026-02-052017Journal of Alloys and Compounds, 2017, 715, , pp. 224-2299258388https://doi.org/10.1016/j.jallcom.2017.04.312https://idr.nitk.ac.in/handle/123456789/25790Herein, the thermoelectric properties of vacuum deposited In<inf>2</inf>Te<inf>3</inf> thin films were investigated by varying the substrate temperature and the thickness of the films. The thermo-electro motive force of the prepared films was found to increase with an increase in the substrate temperature up to 423 K and then decrease at 473 K due to the presence of mixed-phase structure. The maximum thermoelectric power of 220 ?V/K was observed for the films deposited at 423 K substrate temperature, which was found to decrease with increase in thickness. The films deposited at 423 K with 150 nm thickness showed maximum power factor of 27 ?Wm?1K?2 at 450 K. These observations are explained on the basis of structural, morphological and compositional changes. © 2017 Elsevier B.V.DepositionPhase structureThermoelectric equipmentThermoelectricityVapor depositionX ray diffractionCompositional changesMaximum power factorSubstrate temperatureThermo-Electric materialsThermoelectricThermoelectric propertiesThickness of the filmThin films