Rao, K.G.Bangera, K.V.Shivakumar, G.K.2026-02-052011Solid-State Electronics, 2011, 56, 1, pp. 100-103381101https://doi.org/10.1016/j.sse.2010.12.004https://idr.nitk.ac.in/handle/123456789/27302The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model. © 2010 Elsevier Ltd. All rights reserved.AndersonsBand diagramsBarrier heightsC-V characteristicC-V characterizationCdTeConduction MechanismDepletion regionElectrical characterizationHeterojunction diodesIV characteristicsIV characterizationVacuum deposition methodCadmium alloysCadmium compoundsCarrier concentrationSemiconductor diodesVacuumVacuum depositionHeterojunctions