Please use this identifier to cite or link to this item: https://idr.nitk.ac.in/jspui/handle/123456789/8283
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dc.contributor.authorRanjana, J.S.
dc.contributor.authorBhatt, P.
dc.contributor.authorSurdi, H.
dc.contributor.authorSangala, B.R.
dc.contributor.authorSatyanarayan, M.N.
dc.contributor.authorUmesh, G.
dc.contributor.authorPrabhu, S.S.
dc.date.accessioned2020-03-30T10:18:20Z-
dc.date.available2020-03-30T10:18:20Z-
dc.date.issued2014
dc.identifier.citationInternational Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2014, Vol., , pp.-en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/8283-
dc.description.abstractWe demonstrate experimental and theoretical studies on the transmission characteristics of Terahertz (THz) Semiconductor-Insulator-Semiconductor (SIS) Planar Plasmonic waveguide made up of Indium Antimonide (InSb). We report tunability of the waveguide characteristics by changing the device geometrical dimensions. The results are of critical importance for optimizing and determining the resonance characteristics of the device. � 2014 IEEE.en_US
dc.titleIndium Antimonide (InSb) based planar terahertz plasmonic waveguideen_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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