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dc.contributor.authorBangera, K.V.-
dc.contributor.authorRao, G.K.-
dc.contributor.authorShivakumar, G.K.-
dc.date.accessioned2020-03-30T10:18:01Z-
dc.date.available2020-03-30T10:18:01Z-
dc.date.issued2011-
dc.identifier.citationAIP Conference Proceedings, 2011, Vol.1341, , pp.328-331en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/8038-
dc.description.abstractThe study of n-CdTe/p-ZnTe heterojunctions is of vital importance for the fabrication of single junction and tandem solar cells. In the present research work n-CdTe/p-ZnTe heterojunction diodes were prepared by high vacuum deposition technique. The growth conditions required for obtaining desired quality n-CdTe and p-ZnTe films were optimized by performing a series of trials. The n-CdTe/p-ZnTe heterojunctions were prepared by first depositing CdTe film on glass substrate and then depositing ZnTe flim on top of CdTe. Detailed electrical characterization of the heterojunction was performed. The conduction in the heterojunction was predominantly due to thermionic emission at low voltages. However at higher voltages space charge limited conduction was found to be dominant. The barrier height of the heterojunction was deduced by studying the I-V characteristics. � 2011 American Institute of Physics.en_US
dc.titleFabrication and electrical characterization of vacuum deposited n-CdTe/p-ZnTe heterojunction diodesen_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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