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dc.contributor.authorRekha, S.
dc.contributor.authorLaxminidhi, T.
dc.identifier.citationInformal Proceedings of the 11th International Workshop of Electronics, Control, Measurement, Signals and Their Application to Mechatronics, ECMSM 2013, 2013, Vol., , pp.-en_US
dc.description.abstractThis paper presents the design of a low voltage, ultra low power fifth order Chebyshev low pass filter operating at a power supply voltage of 0.5 V in 180 nm CMOS technology. A CMOS inverter based transconductor is used as the building block. A sub-threshold model is developed for the transconductor as the transistors are operating in sub-threshold region. A feedforward compensated OTA is designed using this transconductor and is used to realize the filter. Designed filter has a cutoff frequency of 150 kHz and offers a dynamic range of 54.16 dB with a figure of merit of 0.02 fJ. Power consumed by the filter is 21.79 microwatt. � 2013 IEEE.en_US
dc.titleUltra low power active-RC filter in 180 nm CMOS technologyen_US
dc.typeBook chapteren_US
Appears in Collections:2. Conference Papers

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