Spray deposited gallium doped tin oxide thinfilm for acetone sensor application

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DC Field	Value	Language
dc.contributor.author	Preethi, M.S.
dc.contributor.author	Bharath, S.P.
dc.contributor.author	Bangera, K.V.
dc.date.accessioned	2020-03-30T09:45:55Z	-
dc.date.available	2020-03-30T09:45:55Z	-
dc.date.issued	2018
dc.identifier.citation	AIP Conference Proceedings, 2018, Vol.1943, , pp.-	en_US
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/6623	-
dc.description.abstract	Undoped and gallium doped (1 at.%, 2 at.% and 3 at.%) tin oxide thin films were prepared using spray pyrolysis technique by optimising the deposition conditions such as precursor concentration, substrate temperature and spraying rate. X-ray diffraction analysis revealed formation of tetragonally structured polycrystalline films. The SEM micrographs of Ga doped films showed microstructures. The electrical resistivity of the doped films was found to be more than that of the undoped films. The Ga-doped tin oxide thin films were characterised for gas sensors. 1 at.% Ga doped thin films were found to be better acetone gas sensor, showed 68% sensitivity at 350�C temperature. � 2018 Author(s).	en_US
dc.title	Spray deposited gallium doped tin oxide thinfilm for acetone sensor application	en_US
dc.type	Book chapter	en_US
Appears in Collections:	2. Conference Papers

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