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dc.contributor.authorSahu S.K.
dc.contributor.authorKhoja R.
dc.contributor.authorKanu S.
dc.contributor.authorKumar A.
dc.contributor.authorSingh M.
dc.identifier.citationOptical Engineering Vol. 59 , 4 , p. -en_US
dc.description.abstractACMOS compatible three-port all-optical silicon switch working in 1.473 to 1.502 μm (extinction ratio (ER) = 5.5 dB, λC = 1.488 μm) and 1.512 to 1.5306 μm (ER = 3.079 dB, λC = 1.52 μm) bands is demonstrated in this work through numerical simulations. However, in spite of the all optical control, having null refractive index contrast between the transmitting and control waveguides of the switch causes the switching merit to deteriorate because of light leaking from the transmitting waveguide. Later, by employing Franz Keldysh effect-induced absorption coefficient tuning of Si1-x Gex (x = 0.85) to replace the silicon control port of the switch, 2.95-dB leakage reduction in the ON state is achieved, which is assessed in detail. Also, our numerical simulations confirmed the bandwidth of 38 GHz, which suggested a multilayer plasmonic waveguide structure. © 2020 Society of Photo-Optical Instrumentation Engineers (SPIE).en_US
dc.titleSimulation study of multilayer hybrid plasmonic switch using Franz-Keldysh effecten_US
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