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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Raveendra Kiran M. | |
| dc.contributor.author | Ulla H. | |
| dc.contributor.author | Satyanarayan M.N. | |
| dc.contributor.author | Umesh G. | |
| dc.date.accessioned | 2021-05-05T10:26:59Z | - |
| dc.date.available | 2021-05-05T10:26:59Z | - |
| dc.date.issued | 2020 | |
| dc.identifier.citation | Superlattices and Microstructures Vol. 148 , , p. - | en_US |
| dc.identifier.uri | https://doi.org/10.1016/j.spmi.2020.106718 | |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/15386 | - |
| dc.description.abstract | In this study, the resistance switching (RS) behaviour of the fabricated devices with the configuration: ITO/ZnO (x annealing temperature)/Al were investigated. It was observed that the area of a hysteresis loop in the Current-Voltage characteristics was reduced with increase in ZnO annealing temperature. Correspondingly, the on/off ratio of the RS also gets reduced. The hysteresis behaviour was highly consistent and repeatable for the films annealed at 150 °C. The films annealed at 450 °C did not show any RS behaviour. Under the high current condition, a reproducible RS behaviour was observed. This was attributed to the synergetic effects of lowering of the barrier height at electrode/ZnO interface and the increase in the grain size with the annealing temperatures. The RS behaviour is ascribed to the conduction mechanism at the ITO/ZnO interface. © 2020 Elsevier Ltd | en_US |
| dc.title | Effects of annealing temperature on the resistance switching behaviour of solution-processed ZnO thin films | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
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