Simulation and Modelling of screen oxide thickness dependent implantation peak position in Silicon

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DC Field	Value	Language
dc.contributor.author	Hegde G.R.
dc.contributor.author	Nikhil K.S.
dc.contributor.author	Rao R.
dc.date.accessioned	2021-05-05T10:16:17Z	-
dc.date.available	2021-05-05T10:16:17Z	-
dc.date.issued	2020
dc.identifier.citation	Proceedings of CONECCT 2020 - 6th IEEE International Conference on Electronics, Computing and Communication Technologies , Vol. , , p. -	en_US
dc.identifier.uri	https://doi.org/10.1109/CONECCT50063.2020.9198502
dc.identifier.uri	http://idr.nitk.ac.in/jspui/handle/123456789/15048	-
dc.description.abstract	The relation between peak boron concentration position from the silicon-silicon dioxide interface (xp) after implantation through screen oxide with oxide thickness of (tox) is investigated in this paper. It is observed that the xp decreases with increase in tox. The rate of reduction is observed to be significantly higher for thin oxides. An empirical relation is proposed to model the oxide thickness dependent peak position with appropriate model parameters. © 2020 IEEE.	en_US
dc.title	Simulation and Modelling of screen oxide thickness dependent implantation peak position in Silicon	en_US
dc.type	Conference Paper	en_US
Appears in Collections:	2. Conference Papers

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