Please use this identifier to cite or link to this item: https://idr.nitk.ac.in/jspui/handle/123456789/15048
Title: Simulation and Modelling of screen oxide thickness dependent implantation peak position in Silicon
Authors: Hegde G.R.
Nikhil K.S.
Rao R.
Issue Date: 2020
Citation: Proceedings of CONECCT 2020 - 6th IEEE International Conference on Electronics, Computing and Communication Technologies , Vol. , , p. -
Abstract: The relation between peak boron concentration position from the silicon-silicon dioxide interface (xp) after implantation through screen oxide with oxide thickness of (tox) is investigated in this paper. It is observed that the xp decreases with increase in tox. The rate of reduction is observed to be significantly higher for thin oxides. An empirical relation is proposed to model the oxide thickness dependent peak position with appropriate model parameters. © 2020 IEEE.
URI: https://doi.org/10.1109/CONECCT50063.2020.9198502
http://idr.nitk.ac.in/jspui/handle/123456789/15048
Appears in Collections:2. Conference Papers

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