Please use this identifier to cite or link to this item: https://idr.nitk.ac.in/jspui/handle/123456789/14887
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dc.contributor.authorVignesh R.
dc.contributor.authorGorre P.
dc.contributor.authorKumar S.
dc.contributor.authorSong H.
dc.date.accessioned2021-05-05T10:15:56Z-
dc.date.available2021-05-05T10:15:56Z-
dc.date.issued2019
dc.identifier.citationAsia-Pacific Microwave Conference Proceedings, APMC , Vol. 2019-December , , p. 485 - 487en_US
dc.identifier.urihttps://doi.org/10.1109/APMC46564.2019.9038463
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/14887-
dc.description.abstractThis paper first time reports a wideband low noise amplifier (LNA) with achievable minimum atmospheric absorption frequency band for 5G millimeter wave communication cells. A novel suspended substrate line based parallel-series network is optimized and analyzed that demonstrates a wideband response. The proposed LNA consists of two stage Cascode topology with incorporated parallel-series network and microwave components that provides broadband ranging from 28GHz to 32GHz. A full of two stage Cascode LNA overcoming the traditional mismatching constraints with consideration of suspended substrate lines (SSL) and Tee-junction in the proposed design. It is observed that suspended lines reduce parasitic and bulk effects of devices and enables LNA to provide broadband communication for 5G macro and micro cells. The proposed design is realized using RF 65nm Magna Hynix CMOS process with layout cell. The simulation results reveals that 28GHz-32GHz wide band with maximum forward gain of 25dB. The minimum noise figure of 2.5dB is achieved with optimization of passive components. The input impedance (real and imaginary) and smith chart realization for LNA provides satisfactory performance. © 2019 IEEE.en_US
dc.titleA 28-32GHz CMOS LNA with broadband approach for 5G Mm-wave communication cellsen_US
dc.typeConference Paperen_US
Appears in Collections:2. Conference Papers

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