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dc.contributor.authorSowjanya, V.
dc.contributor.authorBangera, K.V.
dc.contributor.authorG.K., S.
dc.identifier.citationSuperlattices and Microstructures, 2019, Vol.129, , pp.220-225en_US
dc.description.abstractMono-phased and stoichiometric InTe thin films were successfully prepared using vacuum evaporation technique. A systematic variation in substrate temperature and annealing temperature along with annealing duration resulted stoichiometric and single phase InTe films. The annealing treatment of as-deposited films resulted in the structural transformation from mixed phase of In 2 Te 3 and InTe to mono-phased InTe. The electrical conductivity of stoichiometric single phase films was found to be 15.612 ? ?1 cm ?1 . The optical band gap of stoichiometric InTe films was found to be 1.42 eV and absorption coefficient of the films was of the order of 10 6 cm ?1 . Electrical properties of mono-phased films accompanied with optical properties such as direct band gap and absorption coefficient makes them suitable for optoelectronic devices. 2019 Elsevier Ltden_US
dc.titleSynthesis of single-phase stoichiometric InTe thin films for opto-electronic applicationsen_US
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