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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sowjanya, V. | |
| dc.contributor.author | Bangera, K.V. | |
| dc.contributor.author | G.K., S. | |
| dc.date.accessioned | 2020-03-31T08:45:30Z | - |
| dc.date.available | 2020-03-31T08:45:30Z | - |
| dc.date.issued | 2019 | |
| dc.identifier.citation | Superlattices and Microstructures, 2019, Vol.129, , pp.220-225 | en_US |
| dc.identifier.uri | http://idr.nitk.ac.in/jspui/handle/123456789/13272 | - |
| dc.description.abstract | Mono-phased and stoichiometric InTe thin films were successfully prepared using vacuum evaporation technique. A systematic variation in substrate temperature and annealing temperature along with annealing duration resulted stoichiometric and single phase InTe films. The annealing treatment of as-deposited films resulted in the structural transformation from mixed phase of In 2 Te 3 and InTe to mono-phased InTe. The electrical conductivity of stoichiometric single phase films was found to be 15.612 ? ?1 cm ?1 . The optical band gap of stoichiometric InTe films was found to be 1.42 eV and absorption coefficient of the films was of the order of 10 6 cm ?1 . Electrical properties of mono-phased films accompanied with optical properties such as direct band gap and absorption coefficient makes them suitable for optoelectronic devices. 2019 Elsevier Ltd | en_US |
| dc.title | Synthesis of single-phase stoichiometric InTe thin films for opto-electronic applications | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | 1. Journal Articles | |
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