Please use this identifier to cite or link to this item: https://idr.nitk.ac.in/jspui/handle/123456789/12923
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dc.contributor.authorSingh, K.
dc.contributor.authorRaj, B.
dc.date.accessioned2020-03-31T08:42:26Z-
dc.date.available2020-03-31T08:42:26Z-
dc.date.issued2015
dc.identifier.citationJournal of Computational Electronics, 2015, Vol.14, 2, pp.469-476en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/12923-
dc.description.abstractA temperature dependent performance in terms of power delay product (PDP) of multi-walled carbon nanotube (MWCNT) bundle interconnect has been analyzed for temperature range from 200 to 450 K at three different technology nodes viz. 32, 22 and 16nm. A similar analysis is performed for copper interconnect and results are compared with MWCNT bundle interconnect. Comparative results revealed that delay and PDP is increased with rise in temperature ranging from 200 to 450 K. It has also been observed that the temperature dependent MWCNT bundle interconnect gives better performance in terms of delay, power and PDP as compared to copper interconnect for three technology nodes at global interconnect length. 2015, Springer Science+Business Media New York.en_US
dc.titlePerformance and analysis of temperature dependent multi-walled carbon nanotubes as global interconnects at different technology nodesen_US
dc.typeArticleen_US
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