Please use this identifier to cite or link to this item: https://idr.nitk.ac.in/jspui/handle/123456789/12691
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dc.contributor.authorSadananda, Kumar, N.
dc.contributor.authorBangera, K.V.
dc.contributor.authorShivakumar, G.K.
dc.date.accessioned2020-03-31T08:41:59Z-
dc.date.available2020-03-31T08:41:59Z-
dc.date.issued2014
dc.identifier.citationSemiconductors, 2014, Vol.48, 8, pp.1023-1027en_US
dc.identifier.urihttp://idr.nitk.ac.in/jspui/handle/123456789/12691-
dc.description.abstractAluminium doped zinc oxide thin films were deposited on glass substrate by using spray pyrolysis technique. The X-ray diffraction study of the films revealed that the both the undoped and Al doped ZnO thin films exhibits hexagonal wurtzite structure. The preferred orientation is (002) for undoped and up to 3 at % Al doping, further increase in the doping concentration to 5 at % changes the preferred orientation to (101) direction. The surface morphology of the films studied by scanning electron microscope, reveal marked changes on doping. Optical study indicates that both undoped and Al doped films are transparent in the vis- ible region. The band gap of the films increased from 3.24 to 3.36 eV with increasing Al dopant concentration from 0 to 5 at % respectively. The Al doped films showed an increase in the conductivity by three orders of magnitude with increase in doping concentration. The maximum value of conductivity 106.3 S/cm is achieved for 3 at % Al doped films. Pleiades Publishing, Ltd., 2014.en_US
dc.titleProperties of nanostructured Al Doped ZnO thin films grown by spray pyrolysis techniqueen_US
dc.typeArticleen_US
Appears in Collections:1. Journal Articles

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